Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low‐Power Memory

Abstract Resistive switching memories have garnered significant attention due to their high‐density integration and rapid in‐memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications with respect to their manufacturing process complexity, a leakage current of high resistance state (HRS), and the sneak‐path current problem that limits their scalability. Here, a mild‐temperature thermal oxidation technique for the fabrication of low‐power and ultra‐steep memristor based on Ag/TiO x /SnO x /SnSe 2 /Au architecture is developed. Benefiting from a self‐assembled oxidation layer and the formation/rupture of oxygen vacancy conductive filaments, the device exhibits an exceptional threshold switching behavior with high switch ratio exceeding 10 6 , low threshold voltage of ≈1 V, long‐term retention of >10 4 s, an ultra‐small subthreshold swing of 2.5 mV decade −1 and high air‐stability surpassing 4 months. By decreasing temperature, the device undergoes a transition from unipolar volatile to bipolar nonvolatile characteristics, elucidating the role of oxygen vacancies migration on the resistive switching process. Further, the 1T1R structure is established between a memristor and a 2H‐MoTe 2 transistor by the van der Waals (vdW) stacking approach, achieving the functionality of selector and multi‐value memory with lower power consumption. This work provides a mild‐thermal oxidation technology for the low‐cost production of high‐performance memristors toward future in‐memory computing applications.