Investigation of Threshold Voltage Shift for SiC MOSFET in Switching Operation

Silicon carbide (SiC) MOSFETs has been applied in electrical vehicle (EV) for lower conduction losses and higher efficiency. But long-term reliability issue especially, the stability of gate threshold voltage in switching operation is crucial. This article investigates the influence of different switching stress on threshold voltage instability in a boost circuit, and analyses mechanism of different switching stress on the degradation of various parts of MOSFETs through capacitance-voltage (C-V) characteristics curve.