硫化
能量转换效率
异质结
材料科学
钙钛矿(结构)
原位
化学工程
化学
纳米技术
结晶学
光电子学
有机化学
硫黄
工程类
冶金
作者
Xuemin Guo,Chunyan Lu,Wenxiao Zhang,Haobo Yuan,S. J. Xu,Acan Liu,Zhengbo Cui,Wen J. Li,Yuyang Hu,Xiaodong Li,Junfeng Fang
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2024-01-03
卷期号:9 (1): 329-335
被引量:10
标识
DOI:10.1021/acsenergylett.3c01855
摘要
Inverted CsPbI3 commonly exhibits a more p-type surface than bulk, which induces severe interfacial recombination and, thus, limits the device's Voc and efficiency in inverted perovskite solar cells (PSCs). Here, a gradual CsPbI3/PbS heterojunction is constructed to inhibit such recombination through in situ chemical sulfidation with N,N′-diphenylthiourea (DPhTA). DPhTA can directly react with CsPbI3 to form PbS and induce a p- to n-type transition at the CsPbI3 surface, which leads to the energy level bending downward and establishing a gradual CsPbI3/PbS heterojunction at the top of the surface region. PSCs with DPhTA exhibit a high Voc of 1.20 V and reach over 20% efficiency (stabilized efficiency of 19.5%), which is among the highest efficiencies of inverted CsPbI3 PSCs. In addition, the strong Pb–S bond and well-matched crystal lattice of PbS will protect and stabilize the CsPbI3 layer beneath, thereby greatly improving the device's stability. Resulting PSCs retain over 95% of the initial efficiency whether after maximum power point (MPP) tracking for 1200 h or N2 storage for 300 days.
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