带隙
半导体
材料科学
光谱学
吸收(声学)
光电子学
磷化镓
外推法
吸收光谱法
紫外线
光学
物理
数学
量子力学
数学分析
复合材料
作者
Hong Zhong,Fengjiao Pan,Shuai Yue,Chengzhen Qin,V. G. Hadjiev,Fei Tian,Xinfeng Liu,Lin Feng,Zhiming M. Wang,Jiming Bao
标识
DOI:10.1021/acs.jpclett.3c01416
摘要
The Tauc plot is widely used to determine the bandgap of semiconductors, but the actual plot often exhibits significant baseline absorption below the expected bandgap, leading to bandgap discrepancies from two different extrapolations. In this work, we first discuss the origin of baseline absorption and show that both extrapolation methods can produce significant errors by simulating Tauc plots with varying levels of baseline absorption. We then propose and experimentally verify a new method that idealizes the absorption spectrum by removing its baseline before constructing the Tauc plot. Finally, we apply this new method to cubic boron arsenide (c-BAs), resolve its bandgap discrepancies, and obtain a converging bandgap of 1.835 eV based on both previous and new transmission spectra. The method is applicable to both indirect and direct bandgap semiconductors with absorption spectrum measured via transmission or diffuse reflectance, which will become essential to obtain accurate values of their bandgaps.
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