InAs/GaSb superlattice long-wavelength infrared detectors with InPSb hole barriers

We report high-performance double heterojunction long-wavelength infrared detectors based on InAs/GaSb superlattices grown by metal–organic chemical vapor deposition. A p-type InAs/GaSb superlattice absorber was combined with an InPSb hole barrier to suppress the dark current and facilitate the transport of minority electrons. At 77 K, the device demonstrates a dark current of only 1.4 × 10−5 A/cm2 at − 0.1 V. Spectral measurement indicates the device has a 50 % cut-off wavelength of 9.4 μm, a peak blackbody responsivity of 2.8 A/W and a peak specific detectivity over 1.2 × 1012 cm·Hz/W.