量子点
电致发光
光电子学
发光二极管
钝化
材料科学
二极管
激子
猝灭(荧光)
纳米晶
纳米技术
荧光
光学
物理
图层(电子)
量子力学
作者
Xiao Luo,Siyu He,Desui Chen,Guolong Sun,Jiejun Zeng,Xitong Zhu,Wangxiao Jin,Xiuyuan Lu,Yanlei Hao,Yizheng Jin
标识
DOI:10.1021/acs.jpclett.4c01594
摘要
Quantum dot light-emitting diodes (QLEDs) are promising electroluminescent devices for next-generation display and solid-state lighting technologies. Achieving shelf-stable and high-performance QLEDs is crucial for their practical applications. However, the successful demonstration of shelf-stable QLEDs with high efficiencies is limited to red devices. Here, we developed a solution-based amine ligand exchange strategy to passivate the surfaces of optical ZnO (O-ZnO) nanocrystals, leading to suppressed exciton quenching at the green and blue QD/oxide interface. Furthermore, we designed new bilayered oxide electron-transporting layers consisting of amine-modified O-ZnO/conductive ZnO. This design simultaneously offers suppressed interfacial exciton quenching and sufficient electron transport in the green and blue QLEDs, resulting in shelf-stable green and blue devices with high efficiencies. Our devices exhibit neglectable changes in external quantum efficiencies (maximum external quantum efficiencies of 22.4% for green and 14.3% for blue) after storage for 270 days. Our work represents a step forward in the practical applications of QLED technology.
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