材料科学
聚结(物理)
位错
GSM演进的增强数据速率
石墨烯
光电子学
氮化物
凝聚态物理
化学物理
纳米技术
结晶学
复合材料
化学
图层(电子)
计算机科学
物理
电信
天体生物学
作者
Bo Shi,Zhetong Liu,Yang Li,Qi Chen,Lei Zhu,Kailai Yang,Liang Meng,Xiaoyan Yi,Junxi Wang,Jinmin Li,Junjie Kang,Peng Gao,Zhiqiang Liu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-06-11
卷期号:24 (24): 7458-7466
标识
DOI:10.1021/acs.nanolett.4c01724
摘要
The majority of dislocations in nitride epilayers are edge threading dislocations (TDs), which diminish the performance of nitride devices. However, it is extremely difficult to reduce the edge TDs due to the lack of available slip systems. Here, we systematically investigate the formation mechanism of edge TDs and find that besides originating at the coalescence boundaries, these dislocations are also closely related to geometrical misfit dislocations at the interface. Based on this understanding, we propose a novel strategy to reduce the edge TD density of the GaN epilayer by nearly 1 order of magnitude via graphene-assisted remote heteroepitaxy. The first-principles calculations confirm that the insertion of graphene dramatically reduces the energy barrier required for interfacial sliding, which promotes a new strain release channel. This work provides a unique approach to directly suppress the formation of edge TDs at the source, thereby facilitating the enhanced performance of photoelectronic and electronic devices.
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