钙钛矿(结构)
材料科学
锡
相(物质)
吡啶
哌啶
系列(地层学)
结晶学
立体化学
化学
有机化学
冶金
古生物学
生物
作者
Chwenhaw Liao,Stefano Bernardi,Christopher G. Bailey,I‐Hsiang Chao,Su‐Ying Chien,Guoliang Wang,Yi-Hsuan Sun,Shi Tang,Jianghui Zheng,Jianpeng Yi,Ming‐Hsuan Yu,Salvy P. Russo,Hung‐Wei Yen,Dane R. McCamey,Brendan J. Kennedy,Asaph Widmer‐Cooper,Chu‐Chen Chueh,Anita Ho‐Baillie
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-05-20
卷期号:18 (22): 14176-14186
被引量:5
标识
DOI:10.1021/acsnano.3c11125
摘要
Two-dimensional (2D) organic–inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion–Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI4, 4AMPSnI4, 3AMPYSnI4, and 4AMPYSnI4 [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI4 is demonstrated with a respectable hole mobility of 0.57 cm2 V–1 s–1 requiring a low threshold voltage of only −2.5 V at a drain voltage of −40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.
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