光电探测器
异质结
光电子学
材料科学
工作职能
宽禁带半导体
工作(物理)
功能(生物学)
纳米技术
图层(电子)
物理
进化生物学
生物
热力学
作者
Q.Y. Hao,Liang Chen,Wenliang Wang,Guoqiang Li
摘要
MXene/InGaN heterojunction photodetectors with simple structure and superior optoelectronic performance are considered a viable option for optical communication. However, the integration of MXene with InGaN faces the problem of a relatively low Schottky barrier, leading to electron backflow, which hinders the separation of carriers and limits the photoresponse of photodetectors. Herein, high-performance MXene/InGaN heterojunction photodetectors were fabricated, and the work function of Ti3C2TX was modulated to explore its effect on the performance of the photodetectors. The ascorbic acid treatment increased the work function of MXene from 4.20 to 4.34 eV, enhancing the Schottky barrier height of the heterojunction from 0.56 to 0.70 eV. The devices exhibit excellent photoresponse performances, such as a responsivity of 0.133 A W−1 and a specific detectivity of 2.81 × 1011 Jones at −1 V bias, as well as a short rise/decay time of 37.49/110 μs at 0 V bias. Additionally, the photodetectors achieve high stability that can maintain over 95% of the initial value after 3 months. This work indicates the potential for utilizing tunable MXene work function to construct high-performance optoelectronic devices for visible light applications.
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