Incoming Impact on Dishing Improvement in FEOL Process

The dishing improvement always is the eternal goal of Chemical Mechanical Planarization (CMP). A lot of reports about dishing improvement come from CMP itself, such as adjustments of polish pressure, flow rate, rotate speed, slurry selective ratio etc. However, the study of incoming impact on dishing has been reported rarely. In this paper, it has been shown that we can do something in incoming layers for dishing improvement. The dishing could be effectively decreased by adding ion implantation process, UV cure process, setting different anneal temperature in incoming films or introducing the extra layers which polish rate lower than target layer.