材料科学
光伏
钙钛矿(结构)
晶界
图层(电子)
相对湿度
光电子学
重组
纳米技术
光伏系统
化学物理
钙钛矿太阳能电池
能量转换效率
复合材料
化学工程
微观结构
化学
物理
工程类
基因
热力学
生物
生物化学
生态学
作者
Tiantian Liu,Jie Zhang,Minchao Qin,Xin Wu,Fengzhu Li,Xinhui Lu,Zonglong Zhu,Alex K.‐Y. Jen
标识
DOI:10.1002/adfm.202009515
摘要
Abstract It is highly desirable for all‐inorganic perovskite solar cells (PVSCs) to have reduced nonideal interfacial charge recombination in order to improve the performance. Although the construction of a 2D capping layer on 3D perovskite is an effective way to suppress interfacial nonradiative recombination, it is difficult to apply it to all‐inorganic perovskites because of the resistance of Cs + cesium ions in cation exchange reactions. To alleviate this problem, a simple approach using an ultra‐thin 2D perovskite to terminate CsPbI 3 grain boundaries (GBs) without damaging the original 3D perovskite is developed. The 2D perovskite at the GBs not only enhances the charge‐carrier extraction and transport but also effectively suppresses nonradiative recombination. In addition, because the 2D perovskite can prevent the moisture and oxygen from penetrating into the GBs and at the same time suppress the ion migration, the 2D terminated CsPbI 3 films exhibit significantly improved stability against humidity. Moreover, the devices without encapsulation can retain ≈81% of its initial power conversion efficiency (PCE) after being stored at 40 ± 5% relative humidity for 84 h. The 2D‐based champion device exhibits a high PCE of 18.82% with a high open‐circuit voltage of 1.16 V.
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