磁性
凝聚态物理
拓扑绝缘体
范德瓦尔斯力
反铁磁性
磁化
单层
拓扑(电路)
电导
材料科学
联轴节(管道)
GSM演进的增强数据速率
物理
磁场
纳米技术
量子力学
计算机科学
电信
组合数学
数学
冶金
分子
作者
Wenjin Zhao,Zaiyao Fei,Tiancheng Song,Han Kyou Choi,Tauno Palomaki,Bosong Sun,Paul Malinowski,Michael A. McGuire,Jiun‐Haw Chu,Xiaodong Xu,David Cobden
出处
期刊:Nature Materials
[Springer Nature]
日期:2020-03-09
卷期号:19 (5): 503-507
被引量:64
标识
DOI:10.1038/s41563-020-0620-0
摘要
The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials1–9. The ability to simply stack very different two-dimensional van der Waals materials in intimate contact permits a different approach10,11. Here we use this approach to couple the helical edges states in a two-dimensional topological insulator, monolayer WTe2 (refs. 12–16), to a two-dimensional layered antiferromagnet, CrI3 (ref. 17). We find that the edge conductance is sensitive to the magnetization state of the CrI3, and the coupling can be understood in terms of an exchange field from the nearest and next-nearest CrI3 layers that produces a gap in the helical edge. We also find that the nonlinear edge conductance depends on the magnetization of the nearest CrI3 layer relative to the current direction. At low temperatures this produces an extraordinarily large nonreciprocal current that is switched by changing the antiferromagnetic state of the CrI3. The coupling between magnetism and topology is studied in a van der Waals heterostructure.
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