材料科学
串联
钙钛矿(结构)
能量转换效率
光电子学
纳米晶
锡
价带
带隙
纳米技术
化学工程
冶金
复合材料
工程类
作者
Hao Chen,Zijian Peng,Kaimin Xu,Qi Wei,Danni Yu,Congcong Han,Hansheng Li,Zhijun Ning
标识
DOI:10.1007/s40843-020-1470-5
摘要
Narrow-bandgap tin-lead (Sn-Pb) mixed perovskite solar cells (PSCs) play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit. A robust, chemically stable and lowtemperature-processed hole transporting layer (HTL) is essential for building high-efficiency Sn-Pb solar cells and perovskite tandem solar cells. Here, we explore a roomtemperature-processed NiOx (L-NiOx) HTL based on nanocrystals (NCs) for Sn-Pb PSCs. In comparison with hightemperature-annealed NiOx (H-NiOx) film, the L-NiOx film shows deeper valence band and lower trap density, which increases the built-in potential and reduces carrier recombination, leading to a power conversion efficiency of 18.77%, the record for NiOx-based narrow-bandgap PSCs. Furthermore, the device maintains about 96% of its original efficiency after 50 days. This work provides a robust and room-temperatureprocessed HTL for highly efficient and stable narrow-bandgap PSCs.
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