Interlayer of PMMA Doped with Au Nanoparticles for High-Performance Tandem Photodetectors: A Solution to Suppress Dark Current and Maintain High Photocurrent

光电流 光电探测器 暗电流 材料科学 光电子学 串联 兴奋剂 佩多:嘘 量子效率 纳米技术 图层(电子) 复合材料
作者
Muhammad Sulaman,Yong Song,Shengyi Yang,Muhammad Imran Saleem,Maoyuan Li,Chandrasekar Perumal Veeramalai,Ruonan Zhi,Yurong Jiang,Yanyan Cui,Qun Hao,Bingsuo Zou
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:12 (23): 26153-26160 被引量:80
标识
DOI:10.1021/acsami.0c04093
摘要

Currently, colloidal quantum dots (CQDs)-based photodetectors are widely investigated due to their low cost and easy integration with optoelectronic devices. The requirements for a high-performance photodetector are a low dark current and a high photocurrent. Normally, photodetectors with a low dark current also possess a low photocurrent, or photodetectors with reduced dark current possess a reduced photocurrent, resulting in low detectivity. In this paper, a solution to suppress dark current and maintain a high photocurrent, i.e., use of poly(methyl methacrylate) doped with Au nanoparticles (NPs) (i.e., PMMA:Au) as an interlayer for enhanced-performance tandem photodetectors, is presented. Our experimental data showed that the dark current through the tandem photodetector ITO/PEDOT:PSS/PbS:CsSnBr3/ZnO/PMMA:Au/CuSeN/PbS:CsSnBr3/ZnO/Ag is suppressed significantly; meanwhile, a high photocurrent is maintained after a PMMA:Au interlayer has been inserted between two subdetectors. The inserted PMMA:Au interlayer acts as storage nodes for electrons, reducing the dark current through the device; meanwhile, the photocurrent can be enhanced under illumination. As a result, the specific detectivity of the tandem photodetector with 35 nm PMMA:Au interlayer was enhanced significantly from 5.01 × 1012 to 2.7 × 1015 Jones under 300 μW/cm2 532 nm illumination at a low voltage of -1 V as compared to the device without a PMMA:Au interlayer. Further, the physical mechanism of enhanced performance is discussed in detail.
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