记忆电阻器
人工神经网络
计算机科学
振荡(细胞信号)
非线性系统
拓扑(电路)
分叉
控制理论(社会学)
Hopfield网络
物理
人工智能
工程类
量子力学
电气工程
化学
控制(管理)
生物化学
作者
Chunlai Li,Yongyan Yang,Xuanbing Yang,Xiangyu Zi,Fanlong Xiao
标识
DOI:10.1007/s11071-022-07268-y
摘要
This paper proposes a kind of nonvolatile locally active memristor. The three fingerprints for distinguishing memristor is verified by the stable and coexisting pinched hysteresis loops, when excited by bipolar periodical signal. The memristor has three stable equilibrium states, which can be mutually switched by injecting suitable voltage pulses. Therefore, it is considered as a three‐bit‐per‐cell memory device. Moreover, the locally active region can be adjusted by memristive parameter. Then, a neural network model composed of three Hopfield neurons is introduced, which is built by replacing one of the connecting synapses with the locally active memristor. It is found that the distribution of system equilibrium points depends on the coupling weight of memristor synapse. The bifurcation diagram reveals the coexistence phenomenon of multiple stable modes. In particular, when there exists a step difference between the natural frequency of the system and the external excitation frequency, complex bursting oscillation will emerge in the neural network. Finally, the equivalent hardware circuit is designed and implemented to confirm the results of numerical analysis, following commercial discrete components.
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