材料科学
粗糙度(岩土工程)
热接触电导
接触电阻
表面粗糙度
轮廓仪
动力循环
均方根
共发射极
复合材料
温度循环
热阻
表面光洁度
绝缘栅双极晶体管
双极结晶体管
热的
晶体管
电气工程
光电子学
功率(物理)
电压
图层(电子)
工程类
气象学
物理
可靠性(半导体)
量子力学
作者
Tong An,Zezheng Li,Yakun Zhang,Fei Qin,Liang Wang,Zhongkang Lin,Xinling Tang,Yanwei Dai,Yanpeng Gong,Pei Chen
出处
期刊:IEEE Transactions on Power Electronics
[Institute of Electrical and Electronics Engineers]
日期:2022-06-01
卷期号:37 (6): 7286-7298
被引量:12
标识
DOI:10.1109/tpel.2021.3134175
摘要
In this article, the correlation between the thermal contact resistance and the surface roughness characteristics of the contact interface in the press-pack insulated-gate bipolar transistor (PP-IGBT) modules during power cycling was studied by experimental measurements and finite-element (FE) simulation-based factorial design analysis. Thermal transient test technology was applied to examine the change in the thermal characteristic parameters of the PP-IGBT module. This shows that the increase in the thermal contact resistance of the Al metallization/emitter Mo contact interface occurs more dramatically during power cycling. A 3-D surface profilometer was used to evaluate the surface morphology parameters of the Al metallization/emitter Mo contact interface. The equivalent root-mean-square (RMS) roughness increases during power cycling, and the equivalent asperity slope and the equivalent spacing between asperities increase slightly. Additionally, the surface roughening in the corner area of the chip is more obvious than in other regions. A fractional factorial design analysis based on FE simulations was performed. The results indicate that the thermal contact resistance strongly depends on the main effects of the real contact area and the spacing between the asperities, and the RMS roughness and the asperity slope interaction.
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