光电探测器
比探测率
响应度
光电子学
异质结
材料科学
范德瓦尔斯力
偏压
各向异性
光敏性
光电导性
极化(电化学)
各向同性
堆积
半导体
光电效应
光学
电压
物理
光伏系统
化学
量子力学
分子
生态学
生物
物理化学
核磁共振
作者
Qiaojue Ye,Jianting Lu,Huaxin Yi,Zhaoqiang Zheng,Churong Ma,Chun Du,Yichao Zou,Jiandong Yao,Guowei Yang
摘要
A van der Waals heterojunction photodetector has been constructed by vertically stacking a TaIrTe4 flake, a 2D type-II Weyl semimetal, and a WSe2 flake, a typical isotropic 2D semiconductor. Interestingly, the device exhibits a switchable operating mode depending on the direction of the voltage bias. Specifically, under a source-drain bias of −1 V, the device operates in a photovoltaic mode, featuring rapid response rate. Its response/recovery time is down to 22.5/25.1 ms, which is approximately one order of magnitude shorter than that of a pristine WSe2 photodetector (320/360 ms). In contrast, under a source-drain bias of +1 V, the device operates in a photoconductive mode with high photogain. The optimized responsivity reaches 9.1 A/W, and the corresponding external quantum efficiency and detectivity reach 2776% and 3.09 × 1012 Jones, respectively. Furthermore, the effective wavelength range of the TaIrTe4–WSe2 device has been extended to the long-wavelength region as compared to a WSe2 device. Beyond these, by virtue of the highly anisotropic crystal structure of TaIrTe4, the hybrid device exhibits polarized photosensitivity. Its anisotropy ratio reaches 1.72 (1.75) under a voltage bias of +1 (−1 V). On the whole, this research work provides a paradigm for the design and implementation of 2D materials based multifunctional optoelectronic devices.
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