铁磁性
自旋电子学
材料科学
居里温度
磁性半导体
凝聚态物理
氧化物
铁磁材料性能
兴奋剂
居里
工程物理
纳米技术
磁化
冶金
光电子学
磁场
物理
量子力学
作者
L. Chouhan,S. K. Srivastava
标识
DOI:10.1016/j.mssp.2022.106768
摘要
d0 ferromagnetic oxide semiconductors have recently been proposed as a potential and alternative material with high Curie temperature ferromagnetism, which is important to realize spintronics devices operable at room temperature. We review the recent development in non-magnetic elements doped d0 ferromagnetic oxide semiconductors, including SnO2, TiO2, ZnO, ZrO2 and MgO. The experimental and theoretical results from recent literature on these atypical d0 ferromagnetic materials are discussed, with a particular focus on their magnetic properties.
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