材料科学
晶界
纳米晶材料
导电原子力显微镜
薄膜
化学气相沉积
带材弯曲
透射电子显微镜
肖特基势垒
电阻率和电导率
光电子学
纳米技术
复合材料
微观结构
原子力显微镜
二极管
电气工程
工程类
作者
Jonas Deuermeier,Hongjun Liu,Laëtitia Rapenne,Tomás Calmeiro,Gilles Renou,Rodrigo Martins,David Muñoz‐Rojas,Elvira Fortunato
出处
期刊:APL Materials
[American Institute of Physics]
日期:2018-09-01
卷期号:6 (9)
被引量:42
摘要
Direct evidence for the presence of a CuO structure in the grain boundaries of Cu2O thin films by chemical vapor deposition is provided by high resolution automated phase and orientation mapping (ASTAR), which was not detectable by classical transmission electron microscopy techniques. Conductive atomic force microscopy (CAFM) revealed that the CuO causes a local loss of current rectification at the Schottky barrier between the CAFM tip and Cu2O. The suppression of CuO formation at the Cu2O grain boundaries is identified as the key strategy for future device optimization.
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