Magnetoresistance and Shubnikov–de Haas oscillations in layered Nb3SiTe6 thin flakes

We present the magnetoresistance (MR) and Hall resistivity of layered ternary ${\mathrm{Nb}}_{3}\mathrm{Si}{\mathrm{Te}}_{6}$ thin flakes with magnetic field up to 33 T. The flakes show strong angle-dependent MR properties and unsaturated quasilinear dependence accompanied with Shubnikov--de Haas (SdH) oscillations. Hall resistivity study demonstrates that the hole carriers dominate the transport properties in the whole temperature range. The angle-dependent SdH oscillations reveal a two-dimensional Fermi surface of ${\mathrm{Nb}}_{3}\mathrm{Si}{\mathrm{Te}}_{6}$. Furthermore, by analysis of SdH oscillations, we observed a nontrivial $\ensuremath{\pi}$-Berry phase in the SdH oscillations which suggests the nontrivial topological nature of ${\mathrm{Nb}}_{3}\mathrm{Si}{\mathrm{Te}}_{6}$.