Analysis of germanium-doped silicon vertical PN junction optical phase shifter

In this paper, the performance of a germanium-doped silicon optical phase shifter with vertical PN junction has been investigated. The proposed phase shifter is simulated using a process simulation tool, and 2D carrier distribution has been used to calculate the phase shifter performance metrics. The designed phase shifter is integrated into a Mach–Zehnder interferometer structure, and the transfer characteristics are plotted. The proposed phase shifter has a phase shift of ∼141°/mm, VπLπ of ∼0.64 V·cm, insertion loss of ∼1.23 dB, and 3 dB bandwidth of ∼37 GHz at 5 V reverse bias.