Alireza Yasan,Ryan McClintock,K. Mayes,S. R. Darvish,Patrick Kung,Manijeh Razeghi
出处
期刊：Applied Physics Letters [American Institute of Physics] 日期：2002-07-29卷期号：81 (5): 801-802被引量：90
标识
DOI：10.1063/1.1497709
摘要
We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is ∼5 V with a differential resistance of ∼40 Ω. The peak emission wavelength redshifts ∼1 nm at high injection currents.
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(2025-6-4)
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