纳米线
凝聚态物理
电场
材料科学
电子
半导体
兴奋剂
氮化物
纳米技术
物理
光电子学
量子力学
图层(电子)
作者
X. W. Zhang,W. J. Fan,S. S. Li,Jian‐Bai Xia
摘要
The electronic structures and electron g factors of InSb1−sNs and GaAs1−sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k∙p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute value larger than 900 is found in InSb1−sNs bulk material. A transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. An electric field tunable zero g factor is found in GaAs1−sNs nanowires.
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