Ga2O3 and GaN Semiconductor Hollow Spheres

Angewandte Chemie International EditionVolume 43, Issue 29 p. 3827-3831 Communication Ga2O3 and GaN Semiconductor Hollow Spheres† Xiaoming Sun, Xiaoming Sun Department of Chemistry, The Key Laboratory of Atomic and Molecular Nanosciences (Ministry of Education), Tsinghua University, Beijing, 100084, China, Fax: (+86) 10-6278-8765Search for more papers by this authorYadong Li Prof. Dr., Yadong Li Prof. Dr. ydli@mail.tsinghua.edu.cn Department of Chemistry, The Key Laboratory of Atomic and Molecular Nanosciences (Ministry of Education), Tsinghua University, Beijing, 100084, China, Fax: (+86) 10-6278-8765Search for more papers by this author Xiaoming Sun, Xiaoming Sun Department of Chemistry, The Key Laboratory of Atomic and Molecular Nanosciences (Ministry of Education), Tsinghua University, Beijing, 100084, China, Fax: (+86) 10-6278-8765Search for more papers by this authorYadong Li Prof. Dr., Yadong Li Prof. Dr. ydli@mail.tsinghua.edu.cn Department of Chemistry, The Key Laboratory of Atomic and Molecular Nanosciences (Ministry of Education), Tsinghua University, Beijing, 100084, China, Fax: (+86) 10-6278-8765Search for more papers by this author First published: 12 July 2004 https://doi.org/10.1002/anie.200353212Citations: 472 † This work was supported by the NSFC (20025102, 50028201, 20151001), the Foundation for the Author of National Excellent Doctoral Dissertation of P.R. China, and the State Key Project of Fundamental Research for nanomaterials and nanostructures. Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Carbon spheres are used as templates to prepare semiconductor hollow spheres of Ga2O3 (depicted) and GaN. The thickness and uniformity of the final products are predetermined by the thickness of the active layer of the carbon spheres. The diameter of the spheres can be adjusted in the range of 100 nm to 1.5 μm, which covers the band gaps in the spectral regime from UV to near infrared. Citing Literature Volume43, Issue29July 19, 2004Pages 3827-3831 RelatedInformation