凝聚态物理
自旋电子学
材料科学
量子隧道
铁电性
磁电阻
隧道磁电阻
铁磁性
隧道枢纽
电导
自旋极化扫描隧道显微镜
磁场
光电子学
物理
扫描隧道光谱
量子力学
电介质
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2011-01-17
卷期号:22 (8): 085202-085202
被引量:14
标识
DOI:10.1088/0957-4484/22/8/085202
摘要
A simple model is developed to investigate the potential profile changes due to mechanical stress at the ferromagnetic/ferroelectric interfaces of ferromagnetic-ferroelectric-ferromagnetic tunnel junctions with an ultrathin ferroelectric barrier. The potential changes associated with the polarization variation have significant effects on the tunneling conductance of the junctions. The discovered effect is illustrated by the example of a multiferroic tunnel junction in which approximately four orders of changes of the tunneling conductance and several-fold changes of the tunneling magnetoresistance (TMR) are observed due to the spin-flip induced nanomechanical stress. The TMR modulation effect is essential for realization of novel spintronics nano-devices as well as being useful for investigating fundamental aspects of the spin transfer.
科研通智能强力驱动
Strongly Powered by AbleSci AI