异质结
碲化镉光电
带偏移量
导带
材料科学
电子能带结构
价带
半金属
光电子学
凝聚态物理
带隙
物理
电子
量子力学
作者
Kyoung-Keun Lee,T. H. Myers
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2015-03-05
卷期号:33 (3)
被引量:6
摘要
The band alignments of the Bi2Te3/CdTe (111)B (Te-terminated) heterojunction were investigated using high-resolution x-ray and ultraviolet photoemission spectroscopy. The measured valence band offset and the conduction band offset of the Bi2Te3/CdTe were 0.22 ± 0.05 and 1.12 ± 0.05 eV, respectively, and indicated that the Bi2Te3/CdTe heterojunction had a type I band structure.
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