电致发光
材料科学
部分位错
退火(玻璃)
光电子学
阴极发光
晶体缺陷
堆积
位错
发光
发光二极管
凝聚态物理
纳米技术
复合材料
核磁共振
物理
图层(电子)
作者
Joshua D. Caldwell,Alexander J. Giles,Dominic Lepage,Dominic Carrier,Khalid Moumanis,Brett Hull,Robert E. Stahlbush,Rachael L. Myers‐Ward,Jan J. Dubowski,Marc Verhaegen
摘要
We report on the formation, motion, and concentration of localized green emission centers along partial dislocations (PDs) bounding recombination-induced stacking faults (RISFs) in 4H-SiC pin diodes. Electroluminescence imaging depicted the motion of these green emitting point defects during forward bias operation along carbon-core PDs that bound the RISFs. Following high temperature annealing, these green emitting point defects did not contract with the PDs, but remained in the final location during the expansion. This implies that the motion of these green emitting point dislocations is enabled through a recombination-enhanced motion, similar to the process for RISF expansion and contraction within SiC.
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