材料科学
位错蠕变
位错
晶格扩散系数
热扩散率
扩散
透射电子显微镜
杂质
凝聚态物理
蠕动
硅
扩散蠕变
晶界
结晶学
晶体缺陷
格子(音乐)
化学物理
复合材料
冶金
有效扩散系数
化学
热力学
微观结构
纳米技术
物理
医学
有机化学
声学
磁共振成像
放射科
作者
M. Legros,Gerhard Dehm,Eduard Arzt,T. John Balk
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2008-03-20
卷期号:319 (5870): 1646-1649
被引量:439
标识
DOI:10.1126/science.1151771
摘要
Diffusion of atoms in a crystalline lattice is a thermally activated process that can be strongly accelerated by defects such as grain boundaries or dislocations. When carried by dislocations, this elemental mechanism is known as "pipe diffusion." Pipe diffusion has been used to explain abnormal diffusion, Cottrell atmospheres, and dislocation-precipitate interactions during creep, although this rests more on conjecture than on direct demonstration. The motion of dislocations between silicon nanoprecipitates in an aluminum thin film was recently observed and controlled via in situ transmission electron microscopy. We observed the pipe diffusion phenomenon and measured the diffusivity along a single dislocation line. It is found that dislocations accelerate the diffusion of impurities by almost three orders of magnitude as compared with bulk diffusion.
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