等离子体
沉积(地质)
原子层沉积
图层(电子)
铝
材料科学
等离子体处理
分析化学(期刊)
化学
纳米技术
环境化学
冶金
地质学
物理
古生物学
沉积物
量子力学
作者
Paul Poodt,BJ Bas Kniknie,Annalisa Branca,Gjj Hans Winands,F. Roozeboom
标识
DOI:10.1002/pssr.201004542
摘要
Abstract An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al 2 O 3 films from trimethyl aluminum and an He/O 2 plasma. This technique can be used for 2D patterned deposition in a single in‐line process by making use of switched localized plasma sources. It was observed that the sharpness of the patterns is primarily influenced by the concentration of reactive plasma species and by the dimensions of the plasma source. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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