薄脆饼
材料科学
蓝宝石
压力(语言学)
热的
复合材料
GSM演进的增强数据速率
极限抗拉强度
有限元法
相(物质)
径向应力
剪应力
变形(气象学)
机械
结构工程
光学
光电子学
热力学
工程类
化学
语言学
哲学
有机化学
物理
激光器
电信
作者
T. Vodenitcharova,L.C. Zhang,I. Zarudi,Y. Yin,H. Domyo,Tsz Chung Ho
出处
期刊:IEEE Transactions on Semiconductor Manufacturing
[Institute of Electrical and Electronics Engineers]
日期:2006-11-01
卷期号:19 (4): 449-454
被引量:11
标识
DOI:10.1109/tsm.2006.883591
摘要
Sapphire wafers can experience temperature variations during processing in a furnace, which in turn can cause large deformation and stresses in the wafers. This paper aims to reveal the mechanism of stress development and evolution in sapphire wafers during thermal shocks, as well as the dependence of the stresses on some process parameters. Finite-element stress analysis was conducted on a single sapphire wafer subjected to thermal shocks. The results show that the thermal gradient in the radial direction induces high stresses even in mechanically unrestrained wafers. The largest stress components occur at the wafer edge as the largest normal stresses are circumferential; whereas the maximum tensile stress is realized upon cooling, the highest value of the maximum shear stress and the minimum compressive stress eventuate in the heating-up phase. The normal stresses have a parabolic distribution in the radial direction. It was found that holding the furnace temperature leads to a more uniform temperature distribution across the wafer but brings about higher tensile stresses in the cooling phase
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