Time-dependent Characteristics of Electric Field-induced Metal–Insulator Transition of Planer VO2/c-Al2O3 Structure

The electric field-induced metal–insulator transition (MIT) of VO2 films on c-Al2O3(001) substrates was investigated in planer devices with strip line-patterned VO2 and two terminal electrodes. In a device with an electrode gap of 10 µm and an electrode length of 10 µm, we observed a transition from the initial high resistance state (HRS) to the low resistance state (LRS) in which the resistance of LRS was time-independent but current-dependent during electric pulse addition. Another planer device with different electrode dimensions supported the time-independent behavior of the LRS even for a high current. Present results strongly suggested that the electric field-induced MIT of a VO2 film can realize a stable resistive switching based on the Mott transition eliminating the Joule heating effect.