The electrical properties of metal contact Au and Ti on p-type HgCdTe

Schottky barrier photodiodes have been fabricated on p-type Hg1−xCdxTe, composition x=0.22 and carrier concentration from 6×1015 to 5×1016 cm−3, with Au and Ti as contact metals. It has been found that Au barrier height is lower than that of Ti for all carrier concentrations. Low temperature annealing, 75 °C for 24 h, reduces the effective Au barrier height and raises the Ti barrier height. The electrical results are correlated with Auger depth profiling of the difference interfaces, and transport mechanisms are proposed.