材料科学
X射线光电子能谱
氮化硅
临界尺寸
氮化物
光电子学
感应耦合等离子体
金属浇口
等离子体刻蚀
蚀刻(微加工)
等离子体
分析化学(期刊)
硅
晶体管
CMOS芯片
反应离子刻蚀
纳米技术
化学
化学工程
栅氧化层
电气工程
光学
图层(电子)
物理
工程类
电压
量子力学
色谱法
作者
Valentin Bacquié,Aurélien Tavernier,F. Boulard,Olivier Pollet,N. Possémé
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2021-04-06
卷期号:39 (3)
被引量:2
摘要
In this work, we optimize a CH3F/O2/He/SiCl4 chemistry to etch silicon nitride gate spacers for 3D CMOS devices in a 300 mm inductively coupled plasma reactor. The chemistry has high directivity and high selectivity to Si and SiO2. A cyclic approach, which alternates this chemistry with a CH2F2/O2/CH4/He plasma, is investigated. Using quasi in situ x-ray photoelectron spectroscopy and ellipsometry measurements, etching mechanisms are proposed to explain the results obtained. As a result of process optimization, silicon nitride spacers with vertical profile and a small critical dimension loss of 3 nm as well as complete spacers removal on sidewalls of the active area are obtained on 3D patterns, confirming the advantages of this approach.
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