X射线光电子能谱
光致发光
退火(玻璃)
氧气
材料科学
发光
光谱学
分析化学(期刊)
猝灭(荧光)
空位缺陷
结晶学
核磁共振
化学
光电子学
光学
冶金
物理
荧光
量子力学
有机化学
色谱法
作者
Hongwei Fan,Shuangqiao Yang,Panfeng Zhang,Hongyuan Wei,Xianglin Liu,Chunlei Jiao,Qinsheng Zhu,Yonghai Chen,Zhanguo Wang
标识
DOI:10.1088/0256-307x/24/7/089
摘要
ZnO films prepared at different temperatures and annealed at 900°C in oxygen are studied by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (VO) and interstitial oxygen (Oi) before annealing and the quenching of the VO after annealing. By combining the two results it is deduced that the GL and YL are related to the VO and Oi defects, respectively.
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