二极管
电子工程
超调（微波通信）
罪魁祸首
光电子学
材料科学
电气工程
工程类
医学
精神科
心肌梗塞
作者
E. Worley,Reza Jalilizeinali,Sreeker Dundigal,Evan Siansuri,Tony Chang,Vivek Mohan,Xiaonan Zhang
出处
期刊：Electrical Overstress/Electrostatic Discharge Symposium
日期：2010-11-09
卷期号：: 1-8
被引量：5
摘要
An investigation was performed into the cause of unexpectedly low CDM performance of a 65nm SOC LNA. The main culprit was found to be STI diode overshoot due to the fast CDM current rise time. Solutions included replacing the STI diodes with gated diodes and with incorporating a new type of secondary clamp.
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