石墨烯
硅
半导体
材料科学
光电子学
电子迁移率
电子
半导体器件
工程物理
带隙
硅烯
纳米技术
数码产品
图层(电子)
电气工程
物理
工程类
量子力学
作者
Kinam Kim,Jae‐Young Choi,Taek Kim,Seong Ho Cho,Hyun‐Jong Chung
出处
期刊:Nature
[Springer Nature]
日期:2011-11-01
卷期号:479 (7373): 338-344
被引量:679
摘要
As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.
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