钝化
材料科学
硅
晶体硅
等离子体增强化学气相沉积
载流子寿命
薄膜
硅烷
感应耦合等离子体
退火(玻璃)
分析化学(期刊)
纳米晶硅
非晶硅
光电子学
等离子体
图层(电子)
纳米技术
化学
复合材料
物理
量子力学
色谱法
作者
Han Zhou,D. Y. Wei,Shengzhi Xu,Shaoqing Xiao,Luxiang Xu,Shiyong Huang,Yingnan Guo,Shahjahan Khan,Meng Xu
摘要
Amorphous and microcrystal hydrogenated intrinsic silicon (a-Si:H/μc-Si:H) thin films with good silicon surface passivation effect were deposited using a precursor gases of silane and hydrogen, which were discharged by low frequency inductively coupled high density plasma source. With regard to silicon surface passivation, the effect of discharge power on thin films properties, including the optical band gap, the crystal fraction, and bond configuration, as well as the deposition rate were thoroughly investigated. It was found that the best passivation effect was obtained at the region near the transition regime from a-Si:H to μc-Si:H with a minimized incubation layer between the passivation layer and substrate. Cz-silicon wafer passivated by as-deposited μc-Si:H thin films without any post-deposition thermal annealing possesses minority carrier lifetime of about 234 μs. This is attributed to the chemical annealing from the high-density hydrogen plasma during the deposition process. Subsequent thermal annealing in hydrogen flow increased the lifetime to 524 μs with a suppressed maximum surface recombination velocity of as low as 60 cm/s. Throughout the process flow covering the pre-deposition H plasma treatment, the film deposition from H2 diluted feedstock gases and the post-deposition annealing, hydrogen plays a vital role to enhance the minority carrier lifetime by improving the interface properties. The injection level dependent surface recombination velocity was also extracted from the lifetime measurement. The effectivity of the a-Si:H/μc-Si:H for silicon surface passivation in a practical heterojunction solar cell was further validated by the excellent photovoltaic performance.
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