Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

The material properties and c-Si surface passivation have been investigated for films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures between 25 and . Optimal surface passivation by ALD was achieved at with for p-type c-Si. PECVD provided a comparable high level of passivation for and contained a high fixed negative charge density of . Outstanding surface passivation performance was therefore obtained for thermal ALD, plasma ALD, and PECVD for a relatively wide range of material properties.