Structural and Raman studies of Ga 2 O 3 obtained on GaAs substrate

Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied as a function of growth temperature within a range of 750–950 °C. Samples grown in the range of 750–850 °C present nanostructured surface and the samples obtained at higher temperature are oriented to the (004) β-phase. Crystalline structure was confirmed by X-ray diffraction, and Raman scattering studies. The evolution of the surface morphology was analyzed by atomic force microscopy, and scanning electron microscopy.