材料科学
光电子学
阳极
肖特基势垒
肖特基二极管
钼
二极管
电流(流体)
泄漏(经济)
硅
频道(广播)
基质(水族馆)
碳化硅
电气工程
化学
电极
复合材料
冶金
经济
物理化学
宏观经济学
工程类
地质学
海洋学
作者
Tao Zhang,Jincheng Zhang,Weihang Zhang,Yachao Zhang,Xiaoling Duan,Jing Ning,Yue Hao
标识
DOI:10.1088/1361-6641/abcbd5
摘要
Abstract We demonstrate an AlGaN-channel Schottky barrier diode (SBD) with a molybdenum anode that has excellent performance at high temperatures. The AlGaN-channel SBD shows a suppressed leakage current, compared to a GaN-channel SBD, and the leakage current only increases by 3.5 times when the temperature increases from 300 K to 425 K, while that of the GaN-channel SBD increases by 27.8 times. Meanwhile, the forward current also shows less degeneration at an elevated temperature. Combined with the 1 A forward current of a large-periphery device with a perimeter of 20 mm, the AlGaN-channel SBD shows great potential for use in next-generation power electronics, especially in extreme environments.
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