神经形态工程学
同质结
电子线路
逻辑门
计算机科学
电子工程
CMOS芯片
晶体管
材料科学
光电子学
电压
电气工程
工程类
人工神经网络
异质结
机器学习
作者
Chen Pan,Chenyu Wang,Shi‐Jun Liang,Chenyu Wang,Tianjun Cao,Pengfei Wang,Cong Wang,Shuang Wang,Bin Cheng,Anyuan Gao,Erfu Liu,Kenji Watanabe,Takashi Taniguchi,Feng Miao
标识
DOI:10.1038/s41928-020-0433-9
摘要
Reconfigurable logic and neuromorphic devices are crucial for the development of high-performance computing. However, creating reconfigurable devices based on conventional complementary metal–oxide–semiconductor technology is challenging due to the limited field-effect characteristics of the fundamental silicon devices. Here we show that a homojunction device made from two-dimensional tungsten diselenide can exhibit diverse field-effect characteristics controlled by polarity combinations of the gate and drain voltage inputs. These electrically tunable devices can achieve reconfigurable multifunctional logic and neuromorphic capabilities. With the same logic circuit, we demonstrate a 2:1 multiplexer, D-latch and 1-bit full adder and subtractor. These functions exhibit a full-swing output voltage and the same supply and signal voltage, which suggests that the devices could be cascaded to create complex circuits. We also show that synaptic circuits based on only three homojunction devices can achieve reconfigurable spiking-timing-dependent plasticity and pulse-tunable synaptic potentiation or depression characteristics; the same function using complementary metal–oxide–semiconductor devices would require more than ten transistors. A homojunction device made from two-dimensional tungsten diselenide can be used to create circuits that exhibit multifunctional logic and neuromorphic capabilities with simpler designs than conventional silicon-based systems.
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