CMOS芯片
电子工程
消散
电气工程
升压变换器
过程(计算)
计算机科学
功率(物理)
工程类
电压
物理
量子力学
热力学
操作系统
作者
Vasiliki Gogolou,Zoi Agorastou,Vasileios Kalenteridis,Konstantinos Kozalakis,Ioannis Kosmadakis,Kostas Siozios,Eftichios Koutroulis,S. Siskos
标识
DOI:10.1109/mocast52088.2021.9493377
摘要
In this paper, the challenges of designing a boost converter in standard CMOS technology are discussed. Based on theoretical calculations, which take into consideration the characteristics of the technology used, efficient solutions are proposed to overcome the current-stress limitations as well as the power dissipation issues. Following these guidelines, a test DC-DC converter, designed and fabricated in a standard 0.18um CMOS process is presented, along with experimental results.
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