材料科学
光电子学
二极管
肖特基二极管
肖特基势垒
基质(水族馆)
热离子发射
偏压
电压
p-n结
电流(流体)
作者
Peipei Ma,Jun Zheng,Yabao Zhang,Xiangquan Liu,Zhi Liu,Yuhua Zuo,Chunlai Xue,Buwen Cheng
标识
DOI:10.1088/1674-1056/ac2729
摘要
Lateral β-Ga2O3 Schottky barrier diodes (SBDs) on an unintentionally doped (-201) n-type β-Ga2O3 single crystal were fabricated by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channels, the SBDs demonstrated high current density of 223 mA/mm and low specific on resistance of 4.7 mΩ·cm2. Temperature dependent performance was studied and the Schottky barrier height was extracted to between 1.3 eV and 1.35 eV at temperatures ranging from 20℃ to 150℃. These results suggest that the lateral β-Ga2O3 SBDs have tremendous potential for future power electronic applications.
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