材料科学
晶体管
光电子学
电压
电气工程
放大器
高压
低压
电子工程
作者
Farnaz Fahimi Hanzaee,P.J. Langlois,Anastasios G. Polyravas,Ivan B. Dimov,Richard Bayford,George G. Malliaras,Andreas Demosthenous
出处
期刊:International Midwest Symposium on Circuits and Systems
日期:2021-08-09
标识
DOI:10.1109/mwscas47672.2021.9531818
摘要
Organic electrochemical transistors (OECTs) have received significant attention especially in biomedical applications. Despite many efforts on modeling these transistors, simulating OECT-based circuits is still a challenge due to the absence of accurate mathematical models. In this paper a DC model for p-type depletion-mode OECTs is proposed that more closely mimics their characteristics compared to the Bernards–Malliaras (B–M) model. Although OECTs are mostly used as transconductance amplifiers, their use as voltage amplifiers is investigated here with measurements at various drain-source voltages. Compared to the B–M model, the proposed model has better matching up to 3.6% between simulations and measurements of the analyzed transistors.
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