极紫外光刻
干涉光刻
X射线光刻
材料科学
平版印刷术
下一代光刻
抵抗
极端紫外线
光学
光电子学
倍半硅氧烷氢
光刻胶
同步辐射
纳米光刻
制作
纳米技术
电子束光刻
激光器
物理
图层(电子)
替代医学
病理
医学
作者
Nassir Mojarad,Dimitrios Kazazis,Yasin Ekinci
出处
期刊:Journal of vacuum science and technology
[American Vacuum Society]
日期:2021-07-01
卷期号:39 (4)
被引量:3
摘要
We demonstrate the fabrication of metal and dielectric nanostructures using interference lithography with extreme ultraviolet (EUV) and soft x-ray synchrotron radiation down to a 2.5 nm wavelength. These specific wavelengths are chosen because of the industrial relevance for EUV lithography and because they are in the vicinity of the oxygen absorption edge of the high-resolution hydrogen silsesquioxane photoresist, allowing for the exposure of thick layers. We investigate the requirements to fabricate such structures and demonstrate that tall metal nanostructures with aspect ratios up to 7 could be achieved by EUV interference lithography and subsequent electroplating. We use the unique depth-of-focus-free property of interference and achromatic Talbot lithography to fabricate uniformly tilted dielectric nanostructures.
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