材料科学
量子点
光电子学
铟
硫化铅
硫化镉
化学工程
氧化铟锡
图层(电子)
氧化物
带隙
光致发光
硫化锌
纳米晶
作者
Rabia Bashir,Muhammad Kashif Bilal,Amna Bashir,Jianhong Zhao,Sana Ullah Asif,Waqar Ahmad,Jiyang Xie,Wanbiao Hu
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2021-08-05
卷期号:13 (30): 12991-12999
被引量:1
摘要
Colloidal quantum dot solar cells (CQDSCs) have achieved remarkable progress recently in terms of mainly surface passivation and composition-matching matrices on CQDs, while improving the overall photoelectric conversion efficiency (PCE) through electron transport layer (ETL) modifications is less explored. We report a low-temperature solution route to synthesize donor (Al3+/Ga3+/In3+) incorporated zinc oxide (AZO/GZO/IZO) ETL films for PbS CQDSCs. Spectroscopic characterization studies indicate that the IZO ETL fabricated with 150 °C annealing can increase the bandgap the most from 3.56 eV to 3.74 eV, possesses enhanced light transmission (∼94%) and finer particle sizes, and importantly shows the most suitable band alignment and charge transfer ability. Well-dispersed PbS CQDs of around 3 nm are synthesized by a N2-protected reflux method and are surface exchanged with 1-ethyl-3-methylimidazolium iodide (EMII) to allow I− grafting and ethanedithiol (EDT) for the active layer and hole transport layer, respectively. The IZO based PbS CQDSC, with a device architecture of ITO/IZO/PbS-EMII/PbS-EDT/Au, shows an enhanced PCE of 11.1% (comparatively 18% higher than that of the ZnO ETL), a VOC value of 0.64 V, and a JSC of 25.8 mA cm−2. The improved performances benefit from the higher recombination resistance and constrained photoluminescence emission with the utilization of the IZO ETL that provides a superior charge transfer property.
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