材料科学
兴奋剂
多铁性
欧姆接触
泄漏(经济)
薄膜
铁电性
电流密度
光电子学
凝聚态物理
纳米技术
电介质
经济
宏观经济学
物理
量子力学
图层(电子)
作者
J.P. Liu,Zonglin Lv,Ying Hou,L.P. Zhang,Jiangli Cao,H.W. Wang,Wanli Zhao,C. Zhang,Yang Bai,Kangkang Meng,Xiaoguang Xu,Jun Miao
标识
DOI:10.1016/j.ceramint.2022.02.295
摘要
Multi-element doping is an effective method to suppress the leakage of BiFeO3 (BFO). A systematic study on the effect of various elements (La, Er, Zn, Ti) doping on the leakage performance, mechanism and other electrical properties of BFO films was performed As the kinds of doping elements increases, the leakage current density of the BFO film gradually decreases. The leakage current density is gradually reduced from 5.78 × 10−2 A/cm2 doped with one element (La) to 1.25 × 10−2 A/cm2 doped with two elements (La, Ti), 4.13 × 10−3 A/cm2 doped with three elements (La, Ti, Zn), and 4.53 × 10−4 A/cm2 doped with four elements (La, Er, Zn, Ti). Finally, compared with pure BFO films, the leakage current density in doped BFO films is reduced by two orders of magnitude. Moreover, the conduction mechanism in doped BFO films is gradually changed from space charge limited current to ohmic conduction. This work provides an effective method to ameliorate the leakage of ferroelectric materials and lays a foundation for the practical application of BFO-based films.
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