材料科学
二氧化硅
电介质
拉曼光谱
硅
介电强度
电子束光刻
绝缘体(电)
阴极射线
分析化学(期刊)
光电子学
化学工程
电子
纳米技术
复合材料
光学
抵抗
化学
物理
图层(电子)
色谱法
工程类
量子力学
作者
G. Clarke Chapman,Mateus G. Masteghin,David Cox,S. K. Clowes
标识
DOI:10.1016/j.mssp.2022.106736
摘要
The material and electrical properties of silicon dioxide derived insulators formed with a focused electron beam in the presence of a TEOS or TMCTS precursor are presented. Raman and energy dispersive X-ray spectroscopy were used to analyse the chemical structure and composition of the deposited dielectric. It was found that the TEOS precursor induced a purer dielectric with a reduced carbon percentage (∼3%) which was independent of the electron beam energy. An investigation with TMCTS showed the importance of using an additional water vapour supply as an in-situ oxidising co-reactant, suppressing the deposited carbon content by up to a factor of six. Leakage current and voltage breakdown measurements were used to calculate the effective resistance and the dielectric strength of the insulator. The two precursors formed insulators with similar electrical properties with effective resistances on the order of GΩ for <100nm thick depositions and dielectric strengths of 7 MV cm−1, equivalent to those found in sputtered silicon dioxides, but allowing high-resolution maskless lithography.
科研通智能强力驱动
Strongly Powered by AbleSci AI