线性
材料科学
陡坡
相(物质)
光电子学
电气工程
物理
地质学
工程类
岩土工程
量子力学
作者
Nikhil Shukla,Benjamin Grisafe,Ram Krishna Ghosh,Nicholas Jao,Ahmedullah Aziz,Frougier Julien,Matthew Jerry,Sushant Sonde,Sergei Rouvimov,Tatyana Orlova,Sumeet Kumar Gupta,Suman Datta
出处
期刊:International Electron Devices Meeting
日期:2016-12-01
被引量:23
标识
DOI:10.1109/iedm.2016.7838542
摘要
We demonstrate a novel Ag/HfO 2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of ds ), and >10x Ion improvement over the conventional FET (at iso-I off ) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.
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