Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors

Abstract Low‐dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb 2 Se 3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb 2 Se 3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle‐resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb 2 Se 3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb 2 Se 3 NW exhibit a wide spectral photoresponse range from visible to NIR (400–900 nm). Owing to the high crystallinity of Sb 2 Se 3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W −1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb 2 Se 3 NW, the device exhibits polarization‐dependent photoresponse. The high crystallinity and superior anisotropy of Sb 2 Se 3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.